TSM2306CX
TAIWAN SEMICONDUCTOR TSM2306CX 晶体管, MOSFET, N沟道, 3.5 A, 30 V, 0.046 ohm, 10 V, 1 V
The is a 30V N-channel Power MOSFET with high density cell design for ultra low on-resistance and advance trench process technology.
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- ±20V Gate-source voltage
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- 3.5A Continuous source current
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- 75°C/W Junction-to-case thermal resistance
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- 130°C/W Junction-to-ambient thermal resistance