TSM2313CX
TAIWAN SEMICONDUCTOR TSM2313CX 晶体管, MOSFET, P沟道, -3.3 A, -20 V, 0.055 ohm, -4.5 V, -600 mV
The is a P-channel MOSFET offers -20V drain source voltage and -3.3A continuous drain current. It is suitable for use in load and PA switch applications.
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- Advance Trench process technology
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- High density cell design for ultra-low ON-resistance
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- -55 to 150°C Operating junction temperature range