TSM2323CX

TAIWAN SEMICONDUCTOR  TSM2323CX  晶体管, MOSFET, P沟道, -4.7 A, -20 V, 0.031 ohm, -4.5 V, -400 mV

The is a P-channel MOSFET offers -20V drain source voltage and -4.7A continuous drain current. It is suitable for use in load and PA switch applications.

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Advance Trench process technology

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High density cell design for ultra-low ON-resistance

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-55 to 150°C Operating junction temperature range