TSM2312CX
TAIWAN SEMICONDUCTOR TSM2312CX 晶体管, MOSFET, N沟道, 4.9 A, 20 V, 0.027 ohm, 4.5 V, 650 mV
The is a N-channel MOSFET offers 20V drain source voltage and 4.9A continuous drain current. It is suitable for use in load and PA switch applications.
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- Advance Trench process technology
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- High density cell design for ultra-low ON-resistance
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- -55 to 150°C Operating junction temperature range