TSM2314CX
TAIWAN SEMICONDUCTOR TSM2314CX 晶体管, MOSFET, N沟道, 4.9 A, 20 V, 0.027 ohm, 4.5 V, 850 mV
The is a N-channel MOSFET with advanced Trench process technology and ±12V gate source voltage.
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- High Density Cell Design for Ultra Low On-resistance
贸泽:
MOSFET 20V N channel MOSFET
TME:
Transistor: N-MOSFET; unipolar; 20V; 4.9A; SOT23
Newark:
# TAIWAN SEMICONDUCTOR TSM2314CX MOSFET Transistor, N Channel, 4.9 A, 20 V, 0.027 ohm, 4.5 V, 850 mV