TSM2302CX
TAIWAN SEMICONDUCTOR TSM2302CX 晶体管, MOSFET, 低电压, N沟道, 2.4 A, 20 V, 65 mohm, 4.5 V, 450 mV
The is a 20V N-channel Power MOSFET with high density cell design for ultra low on-resistance and advance Trench process technology.
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- ±8V Gate-source voltage
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- 1.6A Continuous source current
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- 75°C/W Junction-to-case thermal resistance
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- 145°C/W Junction-to-ambient thermal resistance
