FDS8949

FAIRCHILD SEMICONDUCTOR  FDS8949  双路场效应管, MOSFET, 双N沟道, 6 A, 40 V, 29 mohm, 10 V, 1.9 V

The is a dual N-channel logic level MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain superior switching performance. It is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

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Low gate charge

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High performance Trench technology for extremely low RDS ON

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High power and current handling capability