FDS8958B

FAIRCHILD SEMICONDUCTOR  FDS8958B  双路场效应管, MOSFET, N和P沟道, 6.4 A, 30 V, 0.021 ohm, 10 V, 2 V

The is a dual N/P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain superior switching performance. The device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. It is suitable for use with DC-to-DC converter, BLU and motor drive inverter applications.