FDS8433A

FAIRCHILD SEMICONDUCTOR  FDS8433A  晶体管, MOSFET, P沟道, 5 A, -20 V, 47 mohm, -4.5 V, -600 mV

The is a single P-channel enhancement-mode Power FET produced using "s proprietary high cell density DMOS technology. This very high density process especially tailored to minimize ON-state resistance and provide superior switching performance. It is suitable for load switch, DC-to-DC converter and battery protection applications.

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Fast switching speed

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High density cell design for extremely low RDS ON

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High power and current handling capability