FDS8960C
FAIRCHILD SEMICONDUCTOR FDS8960C 双路场效应管, MOSFET, 双N沟道, 7 A, 35 V, 24 mohm, 10 V, 2 V
The is a dual N/P-channel enhancement-mode MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain superior switching performance. The device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
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- Fast switching speed