FDC655BN

FAIRCHILD SEMICONDUCTOR  FDC655BN  晶体管, MOSFET, N沟道, 6.3 A, 30 V, 0.021 ohm, 10 V, 1.9 V

The is a logic level single N-channel MOSFET produced using Semiconductor"s advanced PowerTrench® process. It has been especially tailored to minimized ON-state resistance and yet maintain superior switching performance. It is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

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Fast switching

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Low gate charge

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High performance Trench technology for extremely low RDS ON