FDC6561AN

FAIRCHILD SEMICONDUCTOR  FDC6561AN  双路场效应管, MOSFET, 双N沟道, 2.5 A, 30 V, 0.082 ohm, 10 V, 1.8 V

The is a dual N-channel logic level MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. It is well suited for all applications where small size is desirable but especially DC-to-DC conversion in battery powered systems.

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Low gate charge

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Very fast switching

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Small footprint

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Low profile