FDC637AN

FAIRCHILD SEMICONDUCTOR  FDC637AN  晶体管, MOSFET, N沟道, 6.2 A, 20 V, 24 mohm, 4.5 V, 820 mV

最大源漏极电压Vds Drain-Source Voltage| 20V \---|--- 最大栅源极电压Vgs± Gate-Source Voltage| 8V 最大漏极电流Id Drain Current| 6.2A 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance| 32mΩ@ VGS = 2.5V, ID =5.2A 开启电压Vgs（th） Gate-Source Threshold Voltage| 0.4~1.5V 耗散功率Pd Power Dissipation| 1.6W Description & Applications| Single N-Channel, 2.5V Specified Power Trench MOSFET General Description This N-Channel 2.5V specified MOSFET is produced using Semiconductor"s advanced Power Trench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint compared with bigger SO-8 and TSSOP-8 packages. Applications • DC/DC converter • Load switch • Battery Protection Features • Fast switching speed. • Low gate charge. • High performance trench technology for extremely low RDSON • Super SOT TM-6 package 描述与应用| 单N沟道，2.5V额定功率沟槽MOSFET 概述 此N沟道2.5V指定的MOSFET的生产采用飞兆半导体先进的功率沟槽进程，已特别是针对减少通态电阻，但维持出色的开关性能低栅极电荷。 这些设备已设计提供特殊功耗在一个非常小的空间，更大的SO-8和TSSOP-8封装相比。 应用 •DC/ DC转换器 •负荷开关 •电池保护 特点 •快速开关速度。 •低栅极电荷。 •高性能沟道技术极低的RDS（ON） •超级SOT TM-6封装