FDC653N

FAIRCHILD SEMICONDUCTOR  FDC653N  晶体管, MOSFET, N沟道, 5 A, 30 V, 35 mohm, 10 V, 1.7 V

最大源漏极电压Vds Drain-Source Voltage| 30V \---|--- 最大栅源极电压Vgs± Gate-Source Voltage| 20V 最大漏极电流Id Drain Current| 5A 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance| 0.035Ω/Ohm @5999mA,10V 开启电压Vgs（th） Gate-Source Threshold Voltage| 1-2V 耗散功率Pd Power Dissipation| 1.6W Description & Applications| N-Channel Enhancement Mode Field Effect Transistor 5 A, 30 V. RDSON = 0.035 W @ VGS= 10 V RDSON= 0.055 W @ VGS= 4.5 V. Proprietary SuperSOTTM -6 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDSON .Exceptional on-resistance and maximum DC current capability. 描述与应用| N沟道增强型场效应 •低栅极电荷 •开关速度快 •高性能沟道技术极 低RDS（ON） •高功率和电流处理能力