FDS3890

FAIRCHILD SEMICONDUCTOR  FDS3890  双路场效应管, MOSFET, 双N沟道, 4.7 A, 80 V, 0.034 ohm, 10 V, 2.3 V

The is a PowerTrench® dual N-channel MOSFET designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. This MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS ON specifications. The result is a MOSFET that is easy and safer to drive even at very high frequencies and DC-to-DC power supply designs with higher overall efficiency.

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Fast switching speed

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High performance Trench technology for extremely low RDS ON

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High power and current handling capability

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±20V Gate to source voltage

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4.7A Continuous drain current

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20A Pulsed drain current