FDS3580
PowerTrench® N 通道 MOSFET,高达 9.9A,Fairchild Semiconductor### MOSFET 晶体管,Fairchild SemiconductorFairchild 提供大量 MOSFET 设备组合,包括高电压 >250V 低电压 Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性,以减少结电容和反向恢复电荷,无需额外外部元件即可保持系统启动和运行更长时间。
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDSON
specifications. The result is a MOSFET that is easy and safer to drive even at very high frequencies, and DC/DC power supply designs with higher overall efficiency.
Features
• 7.6 A, 80 V. RDSON= 0.027 Ω @ VGS= 10 V
RDSON= 0.031 Ω @ VGS= 6 V.
• Low gate charge 34nC typical.
• Fast switching speed.
• High performance trench technology for extremely low RDSON.
• High power and current handling capability.