FDS3672

FAIRCHILD SEMICONDUCTOR  FDS3672  晶体管, MOSFET, N沟道, 7.5 A, 100 V, 23 mohm, 10 V, 4 V

The is a N-channel MOSFET produced using Semiconductor"s PowerTrench® process. It is suitable for high voltage synchronous rectifier, DC-to-DC converters and off-line UPS, distributed power architectures and VRMs, primary switch for 24 and 48V systems.

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Low miller charge

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Low QRR body diode

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Optimized efficiency at high frequencies

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UIS Capability single pulse and repetitive pulse