FDS3572
FAIRCHILD SEMICONDUCTOR FDS3572.. 场效应管, MOSFET, N沟道
The is a N-channel MOSFET produced using Semiconductor"s PowerTrench® process. It is suitable for use in primary switch for isolated DC-to-DC converters, high voltage synchronous rectifier for DC bus converters, distributed power and intermediate bus architectures.
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- Low miller charge
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- Low QRR body diode
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- Optimized efficiency at high frequencies
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- UIS Capability single pulse and repetitive pulse