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FDS3572

FAIRCHILD SEMICONDUCTOR  FDS3572..  场效应管, MOSFET, N沟道

The is a N-channel MOSFET produced using Semiconductor"s PowerTrench® process. It is suitable for use in primary switch for isolated DC-to-DC converters, high voltage synchronous rectifier for DC bus converters, distributed power and intermediate bus architectures.

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Low miller charge
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Low QRR body diode
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Optimized efficiency at high frequencies
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UIS Capability single pulse and repetitive pulse

FDS3572 PDF数据文档
图片 型号 厂商 下载
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