FDS3890
数据手册.pdf
Fairchild
飞兆/仙童
分立器件
FAIRCHILD SEMICONDUCTOR FDS3890 双路场效应管, MOSFET, 双N沟道, 4.7 A, 80 V, 0.034 ohm, 10 V, 2.3 V
The is a PowerTrench® dual N-channel MOSFET designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. This MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS ON specifications. The result is a MOSFET that is easy and safer to drive even at very high frequencies and DC-to-DC power supply designs with higher overall efficiency.
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- Fast switching speed
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- High performance Trench technology for extremely low RDS ON
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- High power and current handling capability
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- ±20V Gate to source voltage
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- 4.7A Continuous drain current
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- 20A Pulsed drain current