FDS3590

FAIRCHILD SEMICONDUCTOR  FDS3590  晶体管, MOSFET, N沟道, 6.5 A, 80 V, 0.032 ohm, 10 V, 4 V

The is a N-channel MOSFET produced using Semiconductor"s PowerTrench® process. It is designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It features faster switching and lower gate charge than other MOSFETs with comparable RDS ON specifications. The result is a MOSFET that is easy and safer to drive even at very high frequencies and DC-to-DC power supply designs with higher overall efficiency.

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Low gate charge

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Fast switching speed

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High performance Trench technology for extremely low RDS ON

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High power and current handling capability