A2T18S162W31SR3
射频金属氧化物半导体场效应RF MOSFET晶体管 Airfast RF Power LDMOS Transistor 1805-1880 MHz, 32 W Avg., 28 V
Overview
The and A2T18S162W31GSR3 32 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880 MHz.
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## Features
* Designed for Wide Instantaneous Bandwidth Applications
* Greater Negative Gate-Source Voltage Range for Improved Class C Operation
* Able to Withstand Extremely High Output VSWR and Broadband Operating Conditions
* Optimized for Doherty Applications
* RoHS Compliant
## Features RF Performance Table
### 1800 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 1000 mA, Pout = 32 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.- .
- *Frequency** | **Gps
- .
- * | **ηD
- .
- * | **Output PAR
- .
- * | **ACPR
- .
- * | **IRL
- .
- *
\---|---|---|---|---|---
1805 MHz| 19.2| 33.0| 7.1| –34.8| –10
1840 MHz| 20.1| 33.9| 7.0| –34.6| –16
1880 MHz| 19.6| 34.2| 6.8| –34.3| –8