A2T18H455W23NR6

RF Power Transistor,1805 to 1880MHz, 436W, Typ Gain in dB is 15.9 @ 1880MHz, 31.5V, LDMOS, SOT1819

Overview

The 87 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880 MHz.

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## Features

* Advanced High Performance In-Package Doherty

* High Thermal Conductivity Packaging Technology for Reduced Thermal Resistance

* Designed for Wide Instantaneous Bandwidth Applications

* Greater Negative Gate-Source Voltage Range for Improved Class C Operation

* Able to Withstand Extremely High Output VSWR and Broadband Operating Conditions

* Designed for Digital Predistortion Error Correction Systems

* RoHS Compliant

## Features RF Performance Table

### 1800 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 31.5 Vdc, IDQA = 1080 mA, VGSB = 0.25 Vdc, Pout = 87 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

.

*Frequency** | **Gps

dB

.

* | **ηD

%

.

* | **Output PAR

dB

.

* | **ACPR

dBc

.

*

\---|---|---|---|---

1805 MHz| 14.5| 48.1| 8.1| –32.7

1840 MHz| 15.2| 48.2| 8.1| –33.0

1880 MHz| 15.9| 48.4| 8.0| –33.8