A2T18H450W19SR6

RF Power Transistor,1805 to 1880MHz, 199W, Typ Gain in dB is 16.5 @ 1880MHz, 30V, LDMOS, SOT1795

Overview

The 89 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880 MHz.

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## Features

* Advanced High Performance In-Package Doherty

* Designed for Wide Instantaneous Bandwidth Applications

* Greater Negative Gate-Source Voltage Range for Improved Class C Operation

* Able to Withstand Extremely High Output VSWR and Broadband Operating Conditions

* Designed for Digital Predistortion Error Correction Systems

* RoHS Compliant

## Features RF Performance Table

### 1800 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 30 Vdc, IDQA = 800 mA, VGSB = 0.9 Vdc, Pout = 89 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

.

*Frequency** | **Gps

dB

.

* | **ηD

%

.

* | **Output PAR

dB

.

* | **ACPR

dBc

.

*

\---|---|---|---|---

1805 MHz| 16.6| 47.1| 7.9| –31.4

1840 MHz| 16.7| 47.5| 8.0| –32.9

1880 MHz| 16.5| 47.7| 7.9| –38.8