A2T18S162W31SR3

射频金属氧化物半导体场效应RF MOSFET晶体管 Airfast RF Power LDMOS Transistor 1805-1880 MHz, 32 W Avg., 28 V

Overview

The and A2T18S162W31GSR3 32 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880 MHz.

MoreLess

## Features

* Designed for Wide Instantaneous Bandwidth Applications

* Greater Negative Gate-Source Voltage Range for Improved Class C Operation

* Able to Withstand Extremely High Output VSWR and Broadband Operating Conditions

* Optimized for Doherty Applications

* RoHS Compliant

## Features RF Performance Table

### 1800 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 1000 mA, Pout = 32 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

.

*Frequency** | **Gps

dB

.

* | **ηD

%

.

* | **Output PAR

dB

.

* | **ACPR

dBc

.

* | **IRL

dB

.

*

\---|---|---|---|---|---

1805 MHz| 19.2| 33.0| 7.1| –34.8| –10

1840 MHz| 20.1| 33.9| 7.0| –34.6| –16

1880 MHz| 19.6| 34.2| 6.8| –34.3| –8