A2T18S260W12NR3

RF Power Transistor,1805 to 1880MHz, 280W, Typ Gain in dB is 18.7 @ 1880MHz, 28V, LDMOS, SOT1817

Overview

The 56 W RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880 MHz.

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## Features

* Designed for Wide Instantaneous Bandwidth Applications

* Greater Negative Gate-Source Voltage Range for Improved Class C Operation

* Able to Withstand Extremely High Output VSWR and Broadband Operating Conditions

* Optimized for Doherty Applications

* RoHS compliant

## Features RF Performance Table

### 1800 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 1500 mA, Pout = 56 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

.

*Frequency** | **Gps

dB

.

* | **ηD

%

.

* | **Output PAR

dB

.

* | **ACPR

dBc

.

* | **IRL

dB

.

*

\---|---|---|---|---|---

1805 MHz| 18.1| 33.1| 6.9| –34.7| –15

1840 MHz| 18.5| 33.5| 7.0| –35.1| –23

1880 MHz| 18.7| 34.4| 6.8| –34.4| –12