A2T18H410-24SR6

RF Power Transistor,1805 to 1880MHz, 355W, Typ Gain in dB is 17.4 @ 1805MHz, 28V, LDMOS, SOT1800

* Advanced High Performance In-Package Doherty * Greater Negative Gate-Source Voltage Range for Improved Class C Operation * Designed for Digital Predistortion Error Correction Systems

得捷:
IC TRANS RF LDMOS

艾睿:
RF Power LDMOS Transistor

安富利:
Trans MOSFET N-CH 65V 0.00001A 6-Pin NI-1230S T/R

RfMW:
RF Power Transistor,1805 to 1880 MHz, 355 W, Typ Gain in dB is 17.4 @ 1805 MHz, 28 V, LDMOS, SOT1800

Win Source:
IC TRANS RF LDMOS / RF Mosfet LDMOS Dual 28 V 800 mA 1.81GHz 17.4dB 71W NI-1230-4LS2L