FDS8817NZ

FAIRCHILD SEMICONDUCTOR  FDS8817NZ  晶体管, MOSFET, N沟道, 15 A, 30 V, 0.0054 ohm, 10 V, 1.8 V

The is a N-channel MOSFET produced using Semiconductor"s advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance. It is well suited for load switching applications common in portable battery packs.

.

High performance Trench technology for extremely low RDS ON

.

High power and current handling capability

.

3.8kV Typical HBM ESD protection level