A2T18S165-12SR3

射频金属氧化物半导体场效应RF MOSFET晶体管 Airfast RF Power LDMOS Transistor, 2496-2690 MHz, 48 W Avg., 28 V

Overview

The 38 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1995 MHz.

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## Features

* Greater negative gate-source voltage range for improved Class C operation

* Designed for digital predistortion error correction systems

* Optimized for doherty applications

* RoHS compliant

## Features RF Performance Tables

### 1800 MHz

Typical single-carrier W-CDMA performance: VDD = 28 Vdc, IDQ = 800 mA, Pout = 38 W Avg., input signal PAR = 9.9 dB @ 0.01% probability on CCDF.

.

*Frequency** | **Gps

dB

.

* | **ηD

%

.

* | **Output PAR

dB

.

* | **ACPR

dBc

.

* | **IRL

dB

.

*

\---|---|---|---|---|---

1805 MHz| 18.1| 34.6| 6.9| –34.9| –16

1840 MHz| 18.0| 34.3| 6.8| –34.2| –17

1880 MHz| 18.3| 34.9| 6.9| –34.5| –12

### 1900 MHz

Typical single-carrier W-CDMA performance: VDD = 28 Vdc, IDQ = 800 mA, Pout = 38 W Avg., input signal PAR = 9.9 dB @ 0.01% probability on CCDF.

.

*Frequency** | **Gps

dB

.

* | **ηD

%

.

* | **Output PAR

dB

.

* | **ACPR

dBc

.

* | **IRL

dB

.

*

\---|---|---|---|---|---

1930 MHz| 18.1| 32.3| 6.9| –34.4| –16

1960 MHz| 18.6| 32.9| 7.0| –34.4| –18

1995 MHz| 18.7| 34.1| 6.9| –34.2| –12