FDC6318P

FAIRCHILD SEMICONDUCTOR  FDC6318P  双路场效应管, MOSFET, 双P沟道, 2.5 A, -12 V, 90 mohm, -4.5 V, 700 mV

The is a dual P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain low gate charge for superior switching performance.

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High performance Trench technology for extremely low RDS ON

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Small footprint

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Low profile

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±8V Gate to source voltage

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-2.5A Continuous drain/output current

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-7A Pulsed drain/output current