2SJ527L-E

硅P沟道MOS场效应晶体管 Silicon P Channel MOS FET

Description

High speed power switching

Features

•  Low on-resistance

   RDS on= 0.3 Ωtyp.

•  Low drive current

•  4 V gate drive devices

•  High speed switching

艾睿:
Trans MOSFET P-CH Si 60V 5A 3-Pin3+Tab DPAKL-1 Tube

Chip1Stop:
Trans MOSFET P-CH 60V 5A 3-Pin3+Tab DPAKL-1 Box

Verical:
Trans MOSFET P-CH Si 60V 5A 3-Pin3+Tab DPAKL-1 Tube