2SJ528S
硅P沟道MOS场效应晶体管 Silicon P Channel MOS FET
Description
High speed power switching
Features
• Low on-resistance
RDS on = 0.17 Ω typ.
• 4 V gate drive devices
• High speed switching
2SJ528S PDF数据文档
| 图片 | 型号 | 厂商 | 下载 |
|---|---|---|---|
 | 2SJ528S | Renesas Electronics 瑞萨电子 | |
 | 2SJ542-E | Renesas Electronics 瑞萨电子 | |
 | 2SJ567TE16L1,NQ | Toshiba 东芝 | |
 | 2SJ541-E | Renesas Electronics 瑞萨电子 | |
 | 2SJ506S-E | Renesas Electronics 瑞萨电子 | |
| 2SJ517YYTL-E | Renesas Electronics 瑞萨电子 | |
 | 2SJ598-Z-AZ | Renesas Electronics 瑞萨电子 | |
 | 2SJ527S-E | Renesas Electronics 瑞萨电子 | |
 | 2SJ529S-E | Renesas Electronics 瑞萨电子 | |
| 2SJ553L-E | Renesas Electronics 瑞萨电子 | |
 | 2SJ589LS | ON Semiconductor 安森美 |