硅P沟道MOS场效应晶体管 Silicon P Channel MOS FET
Description
High speed power switching
Features
• Low on-resistance
RDS on = 0.050 Ω typ.
• Low drive current.
• 4 V gate drive devices.
• High speed switching.
立创商城:
N沟道 60V 18A
Verical:
Trans MOSFET P-CH 60V 18A 3-Pin3+Tab TO-220AB Box
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