2SJ541-E

硅P沟道MOS场效应晶体管 Silicon P Channel MOS FET

Description

High speed power switching

Features

• Low on-resistance

RDS on = 0.075 Ω typ.

• Low drive current.

• 4 V gate drive devices.

• High speed switching.

艾睿:
Trans MOSFET P-CH Si 60V 15A 3-Pin3+Tab TO-220AB Tube

Chip1Stop:
Trans MOSFET P-CH 60V 15A 3-Pin3+Tab TO-220AB Box

Verical:
Trans MOSFET P-CH Si 60V 15A 3-Pin3+Tab TO-220AB Tube