BSH121,135

NXP  BSH121,135  晶体管, MOSFET, N沟道, 500 mA, 55 V, 2.3 ohm, 4.5 V, 1 V

The is a N-channel enhancement-mode FET in a plastic package using TrenchMOS™1 technology. It is suitable for use in battery management, high speed switch and logic level translator applications.

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Very fast switching

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Logic level compatible

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Subminiature surface-mount package

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-65 to 150°C Operating junction temperature range