BSH108,215

NXP  BSH108,215  晶体管, MOSFET, N沟道, 1.9 A, 30 V, 0.077 ohm, 10 V, 1.5 V

The is a N-channel enhancement-mode FET in a plastic package using TrenchMOS™1 technology. It is suitable for use in battery management, high speed switch and low power DC to DC converter applications.

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Very fast switching

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Logic level compatible

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Subminiature surface-mount package

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-65 to 150°C Operating junction temperature range