BSH114,215
N 通道 MOSFET,高达 0.9A,NXP Semiconductors### MOSFET 晶体管,NXP Semiconductors
The is a 100V N-channel Enhancement Mode Field Effect Transistor uses TrenchMOS™1 technology. Low on resistance and fast switching performance makes this device suitable for use in relays and DC to DC converters applications.
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- 150°C Junction temperature
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- Low conduction losses
得捷:
MOSFET N-CH 100V 500MA SOT23
艾睿:
Trans MOSFET N-CH 100V 0.85A 3-Pin TO-236AB T/R
安富利:
Trans MOSFET N-CH 100V 0.85A 3-Pin TO-236AB T/R
富昌:
BSH 系列 100 V 0.5 Ω 0.83 W N-沟道 增强型 晶体管 - SOT-23
Chip1Stop:
Trans MOSFET N-CH 100V 0.85A 3-Pin TO-236AB T/R
Verical:
Trans MOSFET N-CH 100V 0.85A 3-Pin TO-236AB T/R
Newark:
# NXP BSH114,215 MOSFET Transistor, N Channel, 850 mA, 100 V, 0.4 ohm, 10 V, 3 V
Win Source:
MOSFET N-CH 100V 500MA SOT23