BSH105,215
NXP BSH105,215 晶体管, MOSFET, N沟道, 1.05 A, 20 V, 0.14 ohm, 4.5 V, 570 mV
The is a N-channel enhancement mode Field-Effect Transistor in a plastic package using vertical D-MOS technology. Suitable for high frequency applications due to fast switching characteristics.
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- Logic-level compatible
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- Very fast switching
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- Low threshold voltage
