SIR866DP-T1-GE3

VISHAY  SIR866DP-T1-GE3  场效应管, MOSFET, N通道, 20V, 60A, SOIC, 整卷

The is a 20VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for fixed telecom, low-side DC-to-DC and O-ring applications.

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100% Rg tested

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100% UIS tested

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Low RDS ON

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PWM Qgd and Rg Optimized

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Halogen-free

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-55 to 150°C Operating temperature range