SIR882DP-T1-GE3

VISHAY  SIR882DP-T1-GE3  晶体管, MOSFET, N沟道, 60 A, 100 V, 7.1 mohm, 10 V, 1.2 V

The is a 100VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for DC-to-DC primary side switch, telecom/server and full/half-bridge DC-to-DC applications.

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100% Rg tested

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100% UIS tested

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Halogen-free

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-55 to 150°C Operating temperature range