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SIR880ADP-T1-GE3

VISHAY  SIR880ADP-T1-GE3  晶体管, MOSFET, N沟道, 60 A, 80 V, 0.0052 ohm, 10 V, 1.5 V

The is a 80VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for primary side switch, isolated DC-to-DC converter, full bridge and Synchronous rectification applications.

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100% Rg tested
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100% UIS tested
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Halogen-free
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-55 to 150°C Operating temperature range

SIR880ADP-T1-GE3 PDF数据文档
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