SIR802DP-T1-GE3

VISHAY  SIR802DP-T1-GE3  晶体管, MOSFET, N沟道, 30 A, 20 V, 0.0041 ohm, 10 V, 600 mV

The is a 20VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for DC-to-DC converter, low voltage drive and POL applications.

.

100% Rg tested

.

100% UIS tested

.

Halogen-free

.

-55 to 150°C Operating temperature range