FDN360P
FAIRCHILD SEMICONDUCTOR FDN360P 晶体管, MOSFET, P沟道, 2 A, -30 V, 80 mohm, -10 V, -1.9 V
最大源漏极电压VdsDrain-Source Voltage| -30V \---|--- 最大栅源极电压Vgs±Gate-Source Voltage| 20V 最大漏极电流IdDrain Current| -2A 源漏极导通电阻RdsDrain-Source On-State Resistance| 0.060Ω @-2A,-10V 开启电压Vgs(th)Gate-Source Threshold Voltage| -1--3V 耗散功率PdPower Dissipation| 500mW/0.5W Description & Applications| • Low gate charge 5nC typical. • Fast switching speed. •High performance trench technology for extremely low RDSON • High power and current handling capability. 描述与应用| •低栅极电荷(典型5NC)。 •快速开关速度。 •高性能沟道技术极 低RDS(ON) •高功率和电流处理能力