FDN358P

FAIRCHILD SEMICONDUCTOR  FDN358P  晶体管, MOSFET, P沟道, 1.6 A, -30 V, 200 mohm, -10 V, -1.9 V

最大源漏极电压VdsDrain-Source Voltage| -30V \---|--- 最大栅源极电压Vgs±Gate-Source Voltage| 20V 最大漏极电流IdDrain Current| -1.5A 源漏极导通电阻RdsDrain-Source On-State Resistance| 0.11Ω @-1.5A,-10V 开启电压Vgs（th）Gate-Source Threshold Voltage| -1--2V 耗散功率PdPower Dissipation| 500mW/0.5W Description & Applications| High power version of industry SOT-23 package: identical pin out to SOT-23; 30% higher power handling capability. High density cell design for extremely low RDSON .Exceptional on-resistance and maximum DC current capability. 描述与应用| 行业SOT-23封装的高功率版相同 引脚SOT-23;30％更高的功率处理能力。 高密度电池设计极低的RDS（ON） 卓越的导通电阻和最大DC电流能力