PBHV8115T
NXP PBHV8115T 单晶体管 双极, NPN, 150 V, 30 MHz, 300 mW, 1 A, 250 hFE
The is a 1A NPN breakthrough-in small signal BISS Transistor in a small surface-mount plastic package.
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- High voltage
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- Low collector-emitter saturation voltage VCEsat
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- High collector current capability IC and ICM
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- High collector current gain hFE at high IC
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- AEC-Q101 qualified
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- W6 Marking code