PBHV8540T
NXP PBHV8540T 单晶体管 双极, NPN, 400 V, 30 MHz, 300 mW, 500 mA, 200 hFE
The is a 0.5A NPN breakthrough-in small signal BISS Transistor in a medium power surface-mount plastic package.
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- High voltage
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- Low collector-emitter saturation voltage VCEsat
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- High collector current capability IC and ICM
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- High collector current gain hFE at high IC
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- AEC-Q101 qualified
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- PNP complement is PBHV9040T
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- W4 Marking code