PBHV8140Z
NXP PBHV8140Z 单晶体管 双极, NPN, 400 V, 25 MHz, 730 mW, 1 A, 155 hFE
The is a 1A NPN breakthrough-in small signal BISS Transistor in a medium power surface-mount plastic package with increased heat-sink.
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- High voltage
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- Low collector-emitter saturation voltage VCEsat
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- High collector current capability IC and ICM
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- High collector current gain hFE at high IC
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- AEC-Q101 qualified
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- PNP complement is PBHV9540Z
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- V8140Z Marking code