SIS412DN-T1-GE3

VISHAY  SIS412DN-T1-GE3  晶体管, MOSFET, N沟道, 12 A, 30 V, 20 mohm, 10 V, 1 V

The is a 30V N-channel TrenchFET® Power MOSFET. Suitable for load switches, notebook PCs, desktop PCs and game station applications. The N-channel MOSFET for switching applications are now available with die on resistances around 1mR and with the capability to handle 85A.

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Halogen-free according to IEC 61249-2-21 definition

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100% Rg Tested