SIS468DN-T1-GE3

VISHAY  SIS468DN-T1-GE3  晶体管, MOSFET, N沟道, 30 A, 80 V, 0.016 ohm, 10 V, 1.5 V

The is a 80VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for telecom brick, primary side switch and synchronous rectification applications.

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100% Rg tested

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100% UIS tested

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Capable of operating with 5V gate drive

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Halogen-free

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-55 to 150°C Operating temperature range