SIS434DN-T1-GE3
VISHAY SIS434DN-T1-GE3 晶体管, N沟道
The is a 40VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for POL applications.
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- 100% Rg tested
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- 100% UIS tested
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- Halogen-free
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- -55 to 150°C Operating temperature range
SIS434DN-T1-GE3 PDF数据文档
| 图片 | 型号 | 厂商 | 下载 |
|---|---|---|---|
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