BSS84P H6327

INFINEON  BSS84P H6327  晶体管, MOSFET, P沟道, -170 mA, -60 V, 8 ohm, -10 V, -1.5 V

The from is surface mount, P channel logic level enhancement mode SIPMOS small signal transistor in SOT-23 package. The device features dv/dt and Avalanche ratings.

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Automotive grade AEC-Q101 qualified

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Drain to source voltage Vds of -60V

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Gate to source voltage of ±20V

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Continuous drain current Id of -170mA

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Power dissipation pd of 360mW

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Operating temperature range -55°C to 150°C

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Low on state resistance of 8ohm at Vgs -4.5V